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FQP9N30 View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
FQP9N30
Fairchild
Fairchild Semiconductor Fairchild
FQP9N30 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Typical Characteristics
V
GS
Top : 15.0 V
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
Notes :
1. 250μs Pulse Test
2. TC = 25
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
2.5
2.0
VGS = 10V
1.5
V = 20V
GS
1.0
0.5
Note : TJ = 25
0.0
0
6
12
18
24
30
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
1200
1000
800
600
400
200
C
iss
Coss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
101
100
10-1
2
150
25
-55
Notes :
1. VDS = 50V
2. 250μs Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
15025
Notes :
1. V = 0V
GS
2. 250μs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 60V
DS
10
VDS = 150V
V = 240V
DS
8
6
4
2
Note : ID = 9.0 A
0
0
3
6
9
12
15
18
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2000
 

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