MJD210_ View Datasheet(PDF) - Unisonic Technologies

Part Name

Description

Manufacturer

MJD210_

PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS

Unisonic Technologies 

UTC MJD210 PNP EPITAXIAL PLANAR SILICON TRANSISTOR

FIG. 7 TEMPERATURE CURRENT (AMP)

FIG. 8 THERMAL RESPONSE

FIG. 9 ACTIVE REGION SAFE OPERATING AREA

There are two limitations on the power handling

ability of a transistor: average junction temperature and

second breakdown. Safe operating area curves

indicate IC-VCE limits of the transistor that must be

observed for reliable operation; i.e., the transistor must

not be subjected to greater dissipation than the curves

indicate.

The data of Fig. 9 is based on TJ(pk)=150°C; Tc is

variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided

TJ(pk)≤150°C. TJ(pk) may be calculated from the data

in Figure 8. At high case temperatures, thermal

limitations will reduce the power that can be handled to

values less than the limitations imposed by second

breakdown.

UTC UNISONIC TECHNOLOGIES CO., LTD. 4

QW-R213-001,A

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