2SC4081(2007) View Datasheet(PDF) - ROHM Semiconductor

Part Name

Description

Manufacturer

2SC4081
(Rev.:2007)

General purpose transistor (50V, 0.15A)

ROHM Semiconductor 

Transistors

2SC2412K / 2SC4081 / 2SC4617 /

2SC5658 / 2SC1740S

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Collector-base breakdown voltage BVCBO 60

Collector-emitter breakdown voltage BVCEO 50

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

BVEBO

7

ICBO

−

IEBO

−

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

hFE

VCE(sat)

fT

Cob

120

−

−

−

Typ.

−

−

−

−

−

−

−

180

2

Max.

−

−

−

0.1

0.1

560

0.4

−

3.5

Unit

V

V

V

µA

µA

−

V

MHz

pF

Conditions

IC=50µA

IC=1mA

IE=50µA

VCB=60V

VEB=7V

VCE=6V, IC=1mA

IC/IB=50mA/5mA

VCE=12V, IE=−2mA, f=100MHz

VCE=12V, IE=0A, f=1MHz

zPackaging specifications and hFE

Package

Code

Type

Basic ordering

hFE unit (pieces)

2SC2412K QRS

2SC4081 QRS

2SC4617 QRS

2SC5658 QRS

2SC1740S QRS

T146

3000

−

−

−

−

T106

3000

−

−

−

−

Taping

TL

3000

−

−

−

−

T2L

8000

−

−

−

−

TP

5000

−

−

−

−

hFE values are classified as follows :

Item

Q

R

S

hFE

120 to 270 180 to 390 270 to 560

zElectrical characterristic curves

50

VCE=6V

20

10

5

2

1

0.5

0.2

0.1

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

BASE TO EMITTER VOLTAGE : VBE (V)

Fig.1 Grounded emitter propagation

characteristics

100 Ta=25°C

80

60

40

20

0.50mA

00..4450mmAA

0.35mA

0.30mA

0.25mA

0.20mA

0.15mA

0.10mA

0.05mA

0

IB=0A

0

0.4

0.8

1.2 1.6

2.0

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.2 Grounded emitter output

characteristics ( Ι )

10

Ta=25°C

8

30µA

27µA

24µA

21µA

6

18µA

15µA

4

12µA

9µA

6µA

2

3µA

0

IB=0A

0

4

8

12

16

20

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.3 Grounded emitter output

characteristics ( ΙΙ )

Rev.A

2/3

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