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DTA114TG View Datasheet(PDF) - Unisonic Technologies

Part NameDescriptionManufacturer
DTA114TG PNP DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) UTC
Unisonic Technologies UTC
DTA114TG Datasheet PDF : 3 Pages
1 2 3
DTA114T
PNP SILICON TRANSISTOR
„ ABSOLUTE MAXIMUM RATINGS (TA = 25)
PARAMETER
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-100
mA
SOT-23
Collector Power Dissipation
SOT-323/SOT-523
PC
200
mW
150
Junction Temperature
Storage Temperature
TJ
TSTG
+150
-55~+150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„ ELECTRICAL CHARACTERISTICS (TA= 25, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector-Base Breakdown Voltage
BVCBO IC=-50μA
-50
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA
-50
Emitter-Base Breakdown Voltage
BVEBO IE=-50μA
-5
Collector-Emitter Saturation Voltage
VCE(SAT) IC=-10mA, IB=-1mA
Collector Cutoff Current
ICBO VCB=-50V
Emitter Cutoff Current
IEBO VEB=-4V
DC Current Gain
hFE VCE=-5V, IC=-1mA
100
Input Resistance
R1
7
Transition Frequency
fT
Note: Transition frequency of the device
VCE=-10V, IE=5mA,f=100MHz (Note)
TYP
250
10
250
MAX UNIT
V
V
V
-0.3 V
-0.5 μA
-0.5 μA
600
13 k
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-061.C
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