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SI1032R/X(2008) View Datasheet(PDF) - Vishay Semiconductors

Part Name
Description
Manufacturer
SI1032R/X
(Rev.:2008)
Vishay
Vishay Semiconductors Vishay
SI1032R/X Datasheet PDF : 5 Pages
1 2 3 4 5
Si1032R/X
Vishay Siliconix
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VGS(th)
IGSS
IDSS
ID(on)
Drain-Source On-State Resistancea RDS(on)
Forward Transconductancea
gfs
Diode Forward Voltagea
VSD
Dynamicb
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 2.8 V
VDS = 0 V, VGS = ± 4.5 V
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 4.5 V
VGS = 4.5 V, ID = 200 mA
VGS = 2.5 V, ID = 175 mA
VGS = 1.8 V, ID = 150 mA
VGS = 1.5 V, ID = 40 mA
VDS = 10 V, ID = 200 mA
IS = 150 mA, VGS = 0 V
0.40
0.7
1.2
V
± 0.5
± 1.0
± 1.0
± 3.0
µA
1
10
250
mA
5
7
Ω
9
10
0.5
S
1.2
V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = 10 V, VGS = 4.5 V, ID = 250 mA
VDD = 10 V, RL = 47 Ω
ID 200 mA, VGEN = 4.5 V, RG = 10 Ω
750
75
pC
225
50
25
ns
50
25
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted
0.5
600
VGS = 5 thru 1.8 V
500
0.4
400
0.3
300
0.2
200
0.1
0.0
0
1V
1
2
3
4
5
6
VDS - Drain-to-Source Voltage (V)
Output Characteristics
100
0
0.0
TJ = - 55 °C
25 °C
125 °C
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
www.vishay.com
2
Document Number: 71172
S-81543-Rev. E, 07-Jul-08
 

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