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KTB2955 View Datasheet(PDF) - Inchange Semiconductor

Part Name
Description
Manufacturer
KTB2955
Iscsemi
Inchange Semiconductor Iscsemi
KTB2955 Datasheet PDF : 0 Pages
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
KTB2955
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·Complement to Type KTD3055
APPLICATIONS
·High power amplifier applications
·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-10
A
IB
Base Current
PC
Collector Power Dissipation
@TC=25
TJ
Junction Temperature
-1
A
40
W
150
Tstg
Storage Temperature
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark
 

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