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NZT560(2003) View Datasheet(PDF) - Fairchild Semiconductor

Part Name
Description
Manufacturer
NZT560
(Rev.:2003)
Fairchild
Fairchild Semiconductor Fairchild
NZT560 Datasheet PDF : 5 Pages
1 2 3 4 5
NZT560/NZT560A
NPN Low Saturation Transistor
• These devices are designed with high current gain and low saturation
voltage with collector currents up to 3A continuous.
4
3
2
1 SOT-223
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings* TA=25°C unless otherwise noted
Symbol
Parameter
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
- Continuous
TJ, TSTG
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NZT560/NZT560A
60
80
5
3
- 55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
A
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCEO
BVCBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
IC = 10mA
IC = 100µA
60
V
80
V
V
BVEBO
ICBO
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IEBO
Emitter Cutoff Current
On Characteristics *
IE = 100µA
VCB = 30V
VCB = 30V, TA = 100°C
VEB = 4V
5
V
100 nA
10 µA
100 nA
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
IC = 100mA, VCE = 2V
IC = 500mA, VCE = 2V
IC = 1A, VCE = 2V
IC = 3A, VCE = 2V
IC = 1A, IB = 100mA
IC = 3A, IB = 300mA
70
NZT560
100
NZT560A 250
80
25
NZT560
NZT560A
300
550
300 mV
450 mV
400 mV
VBE(sat) Base-Emitter Saturation Voltage
VBE(on)
Base-Emitter On Voltage
Small Signal Characteristics
IC = 1A, IB = 100mA
IC = 1A, VCE = 2V
1.25 V
1
V
Cobo
Output Capacitance
fT
Transition Frequency
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VCB = 10V, IE = 0, f = 1MHz
IC = 100mA, VCE = 5V, f = 100MHz
75
30 pF
MHz
©2003 Fairchild Semiconductor Corporation
Rev. C3, January 2003
 

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