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Part Name
Description
BUZ173 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ173
SIPMOS® Power Transistor
Infineon Technologies
BUZ173 Datasheet PDF : 8 Pages
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5
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8
BUZ 173
Power dissipation
P
tot
=
Æ’
(
T
C
)
45
W
P
tot
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 ËšC 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25ËšC
-10
2
A
I
D
-10
1
t
p
= 5.6µs
10 µs
100 µs
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
-10 V
-3.8
A
-3.2
I
D
-2.8
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
0.0
0
20 40 60 80 100 120 ËšC 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
-10
0
-10
-1
-10
0
-10
1
1 ms
10 ms
DC
-10
2
V
V
DS
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
Data Sheet
5
05.99
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