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BDX47 View Datasheet(PDF) - Philips Electronics

Part Name
Description
Manufacturer
BDX47
Philips
Philips Electronics Philips
BDX47 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
Philips Semiconductors
PNP Darlington transistors
Product specification
BDX45; BDX47
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BDX45
BDX47
collector-emitter voltage
BDX45
BDX47
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
VBE = 0
open collector
Tamb 25 °C
Tmb 100 °C
MIN.
MAX.
UNIT
60
V
90
V
45
V
80
V
5
V
1
A
2
A
100
mA
1.25
W
5
W
65
+150
°C
150
°C
65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
Rth j-mb
thermal resistance from junction to ambient
in free air
thermal resistance from junction to mounting base
VALUE
100
10
UNIT
K/W
K/W
1997 Jul 02
3
 

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