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BDX44 データシートの表示(PDF) - New Jersey Semiconductor

部品番号コンポーネント説明メーカー
BDX44 SILICON PLANAR DARLINGTON TRANSISTORS NJSEMI
New Jersey Semiconductor NJSEMI
BDX44 Datasheet PDF : 3 Pages
1 2 3
PNP BDX45 - BDX46 - BDX47
NPN BDX42 - BDX43- BDX44
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-mb
Ratings
BDX45
Thermal Resistance, Junction to Ambient BDX46
i BDX47
Thermal Resistance, Junction to
Mounting base
, RnY4R
JJJJJ*
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
Unit
100
K/W
10
Symbol
Ratings
Test Condition(s)
Min Typ MX Unit
- ICES
- IEBO
Collector cut-off current
Emitter cut-off current
VBE = 0 ; -VCE = 45V
VBE = 0 ; -VCE"= 60V
VBE = 0 T -VCE = 80V
lc =0 ; VEB = 4V
BDX45
BDX46 -
BDX47
BDX45
BDX46
-
BDX47
10
10 MA
10
10
- 10 MA
10
-lc=500 mA, -IB=0.5 mA
BDX45
nB^DwX^4a6
1.3
-
- 1.3
- VcE(SAT)
i-lc=1.0A, -!B=1.0mA
Collector-Emitter saturation ; -|c=1 A> -'B=4-0 mA
Voltage (*)
-lc=500 mA, -IB=0.5 mA
Tj=150°C
-lc=1.0A, -lB=1.0mA
Tj=150°C
BDX47
BDX46
BDX47
; BDX45
S^G".*
BDX46
BDX47
onY^R
BDX46
1.3
-
- 1.6
-
- 1.6
1.6
1.3
V
-
- 1.3
1.3
-
- 1.8
-lc=1 .0 A, -IB=4.0 mA
Tj=150°C
BDX45
-
- 1.6
BbX47
1.6
BE(SAT)
Base-Emitter saturation
Vnltane 1*}
V0ltage ( '
FE
DC Current Gain
-lc=500 mA, -IB=0.5 rnA
-I0=fo A, :JB=1'.0 mA "
BDX46
"a~nv~A*
-
BDX47
BDX46""" -
1.9
- 1.9
1.9
- 2.2
.-lc=1.0A,-lB=4.0mA
BoDnXY4^7r
-
- 2.2
2.2
BDX45 1000
-VCE=10.0 V, -lc=150 mA
BDX46 1000 -
-
;
~
1000
80X45 2000
-VcE=1 0.0 V, -lc=500 m A
BDX46 2000 -
-
BDX47 2000
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