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BDX46_ View Datasheet(PDF) - Comset Semiconductors

Part Name
Description
Manufacturer
BDX46_
Comset
Comset Semiconductors Comset
BDX46_ Datasheet PDF : 3 Pages
1 2 3
PNP BDX45 – BDX46 – BDX47
NPN BDX42 – BDX43– BDX44
THERMAL CHARACTERISTICS
Symbol
RthJ-a
RthJ-mb
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to
Mounting base
BDX45
BDX46
BDX47
BDX45
BDX46
BDX47
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
100
10
Unit
K/W
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
- ICES
- IEBO
Collector cut-off current
Emitter cut-off current
VBE = 0 ; -VCE = 45V
VBE = 0 ; -VCE = 60V
VBE = 0 ; -VCE = 80V
IC =0 ; VEB = 4V
-IC=500 mA, -IB=0.5 mA
- VCE(SAT)
- VBE(SAT)
-IC=1.0 A, -IB=1.0 mA
Collector-Emitter saturation
Voltage (*)
-IC=1.0 A, -IB=4.0 mA
-IC=500 mA, -IB=0.5 mA
Tj=150 °C
-IC=1.0 A, -IB=1.0 mA
Tj=150 °C
-IC=1.0 A, -IB=4.0 mA
Tj=150 °C
Base-Emitter saturation
Voltage (*)
-IC=500 mA, -IB=0.5 mA
-IC=1.0 A, -IB=1.0 mA
-IC=1.0 A, -IB=4.0 mA
hFE
DC Current Gain
-VCE=10.0 V, -IC=150 mA
-VCE=10.0 V, -IC=500 mA
COMSET SEMICONDUCTORS
BDX45
BDX46
BDX47
BDX45
BDX46
BDX47
- - 10
- - 10 µA
- - 10
- - 10
- - 10 µA
- - 10
BDX45
-
- 1.3
BDX46
-
- 1.3
BDX47
-
- 1.3
BDX46
-
- 1.6
BDX45
-
- 1.6
BDX47
-
- 1.6
BDX45
-
- 1.3 V
BDX46
-
- 1.3
BDX47
-
- 1.3
BDX46
-
- 1.8
BDX45
-
- 1.6
BDX47
-
- 1.6
BDX45
-
- 1.9
BDX46
-
- 1.9
BDX47
BDX46
-
-
-
-
1.9
2.2
V
BDX45
-
- 2.2
BDX47
-
- 2.2
BDX45 1000 -
-
BDX46 1000 -
-
BDX47 1000 -
-
BDX45 2000 -
-
-
BDX46 2000 -
-
BDX47 2000 -
-
2/3
 

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