STU11N65M5 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STU11N65M5
STMicroelectronics
| STU11N65M5 Datasheet PDF : 0 Pages | |||
STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1) Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
dv/dt (2) Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. ISD ≤ 9 A, di/dt ≤400 A/µs; VDS peak < V(BR)DSS, VDD=400 V
Value
D2PAK
DPAK
TO-220
IPAK
TO-220FP
± 25
9
9 (1)
5.6
5.6 (1)
36
36 (1)
85
25
15
Unit
V
A
A
A
W
V/ns
2500
V
- 55 to 150
°C
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
D2PAK DPAK TO-220FP TO-220 IPAK
Rthj-case
Thermal resistance junction-case
max
Rthj-pcb(1)
Thermal resistance junction-pcb
max
Rthj-amb
Thermal resistance junction-
ambient max
1.47
30
50
5.0
1.47
°C/W
°C/W
62.5
100 °C/W
1. When mounted on 1 inch² FR-4, 2 Oz copper board.
Table 4. Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetetive or not repetetive
(pulse width limited by Tjmax )
2
A
EAS
Single pulse avalanche energy (starting tj=25°C,
Id= IAR; Vdd=50)
130
mJ
Doc ID 022864 Rev 2
3/25
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