INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID=1mA
VGS(TH) Gate Threshold Voltage
VDS= VGS; ID=250µA
RDS(ON) Drain-Source On-stage Resistance VGS=10V; ID=27A
IGSS
Gate Source Leakage Current
VGS=±20V;VDS=0
IDSS
Zero Gate Voltage Drain Current
VDS=48V; VGS=0
VSD
Diode Forward Voltage
IS=44A; VGS=0
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
VDS=25V;
VGS=0V;
fT=1MHz
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
ID=44A;
VDD=30V;
RL=9.1Ω
td(off)
Turn-off Delay Time
isc Product Specification
IRF044
MIN TYPE MAX UNIT
60
V
2.0
4.0
V
0.028 Ω
±100 nA
25
uA
2.5
V
2400
230
pF
1100
130
23
ns
79
81
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