NDD02N60Z View Datasheet(PDF) - ON Semiconductor

Part Name

Description

Manufacturer

NDD02N60Z

N-Channel Power MOSFET 600 V, 4.8 Ω

ON Semiconductor 

NDF02N60Z, NDD02N60Z

THERMAL RESISTANCE

Junction−to−Case (Drain)

Parameter

NDF02N60Z

NDD02N60Z

Symbol

RqJC

Value

4.9

2.2

Unit

°C/W

Junction−to−Ambient Steady State

(Note 3) NDF02N60Z

RqJA

51

(Note 4) NDD02N60Z

41

(Note 3) NDD02N60Z−1

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

Breakdown Voltage Temperature Coeffi-

cient

VGS = 0 V, ID = 1 mA

Reference to 25°C,

ID = 1 mA

BVDSS

600

DBVDSS/

0.6

DTJ

V

V/°C

Drain−to−Source Leakage Current

VDS = 600 V, VGS = 0 V

25°C

150°C

IDSS

1

mA

50

Gate−to−Source Forward Leakage

VGS = ±20 V

IGSS

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source On−Resistance

Gate Threshold Voltage

Forward Transconductance

VGS = 10 V, ID = 1.0 A

VDS = VGS, ID = 50 mA

VDS = 15 V, ID = 1.2 A

RDS(on)

4.0

4.8

W

VGS(th)

3.0

4.0

4.5

V

gFS

1.7

S

DYNAMIC CHARACTERISTICS

Input Capacitance (Note 6)

Output Capacitance (Note 6)

Reverse Transfer Capacitance (Note 6)

Total Gate Charge (Note 6)

Gate−to−Source Charge (Note 6)

Gate−to−Drain (“Miller”) Charge (Note 6)

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

VDD = 300 V, ID = 2.4 A,

VGS = 10 V

Ciss

Coss

Crss

Qg

Qgs

Qgd

215

274

325

pF

25

34

45

4.0

7.0

10

5.0

10

16

nC

1.5

2.4

4.0

3.5

5.3

8.0

Plateau Voltage

Gate Resistance

VGP

6.4

V

Rg

4.9

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

td(on)

9.0

ns

Rise Time

Turn−Off Delay Time

VDD = 300 V, ID = 2.4 A,

tr

7.0

VGS = 10 V, RG = 5 W

td(off)

15

Fall Time

tf

7.0

SOURCE−DRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)

Diode Forward Voltage

IS = 2.4 A, VGS = 0 V

VSD

1.6

V

Reverse Recovery Time

Reverse Recovery Charge

VGS = 0 V, VDD = 30 V

trr

IS = 2.4 A, di/dt = 100 A/ms

Qrr

240

ns

0.7

mC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.

6. Guaranteed by design.

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