STD5N52K3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD5N52K3

N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK

STMicroelectronics 

Electrical characteristics

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

AM08846v1

ID=50µA

RDS(on)

(norm)

2.5

AM08847v1

1.00

2.0

1.5

0.90

1.0

0.80

0.5

0.70

-75

-25

25

75 125 TJ(°C)

0

-75 -25

25

75 125 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Maximum avalanche energy vs

starting Tj

VSD (V)

0.9 TJ=-50°C

0.8

0.7

0.6

TJ=150°C

0.5

0.4

0.3

0.2

0.1

0

0

1

2

3

AM08848v1

TJ=25°C

4

5 ISD(A)

EAS (mJ)

110

100

90

80

70

60

50

40

30

20

10

0

0

AM08849v1

ID=4.4A

20 40 60 80 100 120 140 TJ(°C)

8/23

Doc ID 16952 Rev 2

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