STD5N52K3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STD5N52K3

N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK

STMicroelectronics 

Electrical characteristics

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = Max rating

drain current (VGS = 0) VDS = Max rating, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V; VDS=0

Gate threshold voltage VDS = VGS, ID = 50 µA

Static drain-source on

resistance

VGS = 10 V, ID = 2.2 A

Min. Typ. Max. Unit

525

V

1 µA

50 µA

10 µA

3 3.75 4.5 V

1.2 1.5 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

545

pF

-

45

- pF

8

pF

Coss eq. (1)

Equivalent output

capacitance

VDS = 0 to 420 V, VGS = 0

-

33

- pF

Rg

Gate input resistance f=1 MHz open drain

-

4.7

-

Ω

Qg

Total gate charge

VDD = 420 V, ID = 4.4 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 19)

17

nC

-

3

- nC

10

nC

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

4/23

Doc ID 16952 Rev 2

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