STU5N52K3 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

Manufacturer

STU5N52K3

N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK

STMicroelectronics 

STB5N52K3, STD5N52K3, STF5N52K3, STP5N52K3, STU5N52K3

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

TO-220

D²PAK

Value

DPAK

IPAK

Unit

TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

dv/dt(3)

Drain- source voltage

Gate- source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

525

± 30

4.4

2.77

17.6

70

2.2

100

12

VISO Insulation withstand voltage (AC)

TJ Operating junction temperature

Tstg Storage temperature

- 55 to 150

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 4.4 A, di/dt ≤ 100 A/µs,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

4.4(1)

2.77 (1)

17.6(1)

25

2500

V

V

A

A

A

W

A

mJ

V/ns

V

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case

Thermal resistance junction-case

max.

Rthj-amb

Thermal resistance

junction-ambient max

Rthj-pcb

Thermal resistance junction-pcb

max.

TJ

Maximum lead temperature for

soldering purpose

Value

Unit

TO-220 D²PAK TO-220FP IPAK DPAK

1.79

5

1.79

°C/W

62.5

100

°C/W

30

50 °C/W

300

300

°C/W

Doc ID 16952 Rev 2

3/23

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