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STB5N52K3 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
STB5N52K3 N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET D²PAK, DPAK, TO-220FP, TO-220, IPAK ST-Microelectronics
STMicroelectronics ST-Microelectronics
STB5N52K3 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STB5N52K3, STD5N52K3, STF5N52K3
STP5N52K3, STU5N52K3
N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET
D²PAK, DPAK, TO-220FP, TO-220, IPAK
Features
Order codes
STB5N52K3
STD5N52K3
STF5N52K3
STP5N52K3
STU5N52K3
VDSS RDS(on) max ID
525 V < 1.5 Ω 4.4 A
Pw
70 W
70 W
25 W
70 W
70 W
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
Application
Switching applications
3
2
1
TO-220
3
1
DPAK
3
2
1
TO-220FP
3
2
1
IPAK
3
1
D²PAK
Figure 1. Internal schematic diagram
D(2)
Description
These devices are made using the
SuperMESH3™ Power MOSFET technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting product has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1. Device summary
Order codes
Marking
STB5N52K3
STD5N52K3
STF5N52K3
STP5N52K3
STU5N52K3
5N52K3
G(1)
S(3)
AM01476v1
Package
D²PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2010
Doc ID 16952 Rev 2
1/23
www.st.com
23
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