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MJW16206 View Datasheet(PDF) - Motorola => Freescale

Part Name
Description
Manufacturer
MJW16206
Motorola
Motorola => Freescale Motorola
MJW16206 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
EMITTER–BASE TURN–OFF ENERGY
Typical techniques for driving horizontal outputs rely on a
pulse transformer to supply forward base current, and a
turn–off network that includes a series base inductor to limit
the rate of transition from forward to reverse drive. An alter-
nate drive scheme has been used to characterize the
SCANSWITCH series of devices (see Figure 15). This circuit
produces a ramp of base drive, eliminating the heavy over-
drive at the beginning of the collector current ramp and
underdrive just prior to turnoff produced by typical drive strat-
egies. This high performance drive has two additional impor-
MJW16206
tant advantages. First, the configuration of T1 allows LB to be
placed outside the path of forward base current making it un-
necessary to expend energy to reverse current flow as in a
series base inductor. Second, there is no base resistor to lim-
it forward base current and hence no power loss associated
with setting the value of the forward base current. The pro-
cess of generating the ramp stores rather than dissipates en-
ergy. Tailoring the amount of energy stored in T1 to the
amount of energy, EB(off), that is required to turn–off the out-
put transistor results in essentially lossless operation. [Note:
B+ and the primary inductance of T1 (LP) are chosen such
that 1/2 LP Ib2 = EB(off)].
+ 24 V
U2
MC7812
R13
VI
VO
1K
+ C1
GND
100 µF
+ C2
10 µF
R7
R8 R9
2.7K
9.1K 470
R14
C7
Q2
150
110 pF
MJ11016
(IB)
Q6
2N5401
+ C3
10 µF
R16
430
R1
1K
3.9 V
R17
MDC1000A
120
Q3
MTP3055E
R5 (IC) Q5
1K
MJ11016
C6 +
100 µF
LY
C4
0.005
7
6
OSC VCC
C5
0.1
R15
10K
D2
SCANSWITCH
DAMPER
DIODE
R3
8%
OUT 1
250
GND
U1
T1
LB
R6
1K
MC1391P
2
R12 D1
470 MUR110
1W
R4
22
CY
VCE
Q4 SCANSWITCH
HORIZ OUTPUT
TRANSISTOR
T1: FERROXCUBE POT CORE #1811P3C8
T1: PRIMARY SEC. TURNS RATIO = 13:4
T1: GAPPED FOR LP = 30 µH
LB = 0.5 µH
CY = 0.01 µF
LY = 13 µH
Figure 15. High Resolution Deflection Application Simulator
Motorola Bipolar Power Transistor Device Data
7
 

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