MBR20100CT View Datasheet(PDF) - Wuxi NCE Power Semiconductor Co., Ltd
Part Name
Description
Manufacturer
MBR20100CT Datasheet PDF : 5 Pages
| |||
MBR20100CT
Pb-Free Product
NCE MOS Barrier Rectifier
Description
This Schottky rectifier has been optimized for low reverse leakage at
high temperature, this product special design for high forward and
reverse surge capability
General Features
● VRRM 100V
● IF(AV) 2 x 10 A
● High frequency operation
● Low forward voltage drop
● Center tap package
● Lead free product is acquired
● High Junction Temperature
● High ESD Protection, IEC Model ±10KV
● High Forward & Reverse Surge capability
Application
● Power Supply − Output Rectification
● Power Management
● Instrumentation
Schematic diagram
Marking and pin Assignment
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
MBR20100CT
MBR20100CT
TO-220
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Peak Repetitive Reverse Voltage
VRRM
100
V
Average Forward Current
Per diode
Per device
IF(AV)
10
A
20
A
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IFSM
180
A
Peak Repetitive Reverse Surge Current(Tp=2us)
IRRM
0.5
A
Maximum operation Junction Temperature Range
TJ
-50~150
℃
Storage Temperature Range
Tstg
-50~150
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
|
Share Link: 