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MBR20100CT View Datasheet(PDF) - Wuxi NCE Power Semiconductor Co., Ltd

Part NameDescriptionManufacturer
MBR20100CT NCE MOS Barrier Rectifier NCEPOWER
Wuxi NCE Power Semiconductor Co., Ltd NCEPOWER
MBR20100CT Datasheet PDF : 5 Pages
1 2 3 4 5
MBR20100CT
Pb-Free Product
NCE MOS Barrier Rectifier
Description
This Schottky rectifier has been optimized for low reverse leakage at
high temperature, this product special design for high forward and
reverse surge capability
General Features
VRRM 100V
IF(AV) 2 x 10 A
High frequency operation
Low forward voltage drop
Center tap package
Lead free product is acquired
High Junction Temperature
High ESD Protection, IEC Model ±10KV
High Forward & Reverse Surge capability
Application
Power Supply Output Rectification
Power Management
Instrumentation
Schematic diagram
Marking and pin Assignment
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
MBR20100CT
MBR20100CT
TO-220
Reel Size
Tape width
Quantity
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
Parameter
Symbol
Limit
Unit
Peak Repetitive Reverse Voltage
VRRM
100
V
Average Forward Current
Per diode
Per device
IF(AV)
10
A
20
A
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IFSM
180
A
Peak Repetitive Reverse Surge Current(Tp=2us)
IRRM
0.5
A
Maximum operation Junction Temperature Range
TJ
-50~150
Storage Temperature Range
Tstg
-50~150
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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