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BFP280W View Datasheet(PDF) - Infineon Technologies

Part NameDescriptionManufacturer
BFP280W NPN Silicon RF Transistor Infineon
Infineon Technologies Infineon
BFP280W Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
NPN Silicon RF Transistor
 For low noise, low-power amplifiers in mobile
communications systems (pager, cordless
telephone) at collector currents from 0.2 mA to 8 m
 fT = 7.5 GHz
F = 1.5 dB at 900MHz
BFP 280W
3
4
2
1
VPS05605
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
Package
BFP 280W
REs
1 = E 2 = C 3 = E 4 = B SOT-343
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation, TS  116 °C 1)
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point
Symbol
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
Tj
TA
Tstg
RthJS
Value
Unit
8
V
10
10
2
10
mA
1.2
80
mW
150
°C
-65 ... 150
-65 ... 150
 430
K/W
1TS is measured on the collector lead at the soldering point to the pcb
1
Oct-12-1999
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