BFP280 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BFP280

NPN Silicon RF Transistor

Siemens AG 

NPN Silicon RF Transistor

• For low noise, low-power amplifiers in mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2mA to 8mA

• fT = 7,5GHz

F = 1.5dB at 900MHz

BFP 280

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

BFP 280 REs

Q62702-F1378

1=C 2=E 3=B 4=E

Package

SOT-143

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Base current

Total power dissipation

TS ≤ 108 °C

Junction temperature

Ambient temperature

Storage temperature

Thermal Resistance

Junction - soldering point 1)

Symbol

VCEO

VCES

VCBO

VEBO

IC

IB

Ptot

Tj

TA

Tstg

RthJS

1) TS is measured on the collector lead at the soldering point to the pcb.

Values

8

10

10

2

10

1.2

80

150

- 65 ... + 150

- 65 ... + 150

≤ 520

Unit

V

mA

mW

°C

K/W

Semiconductor Group

1

Dec-11-1996

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