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STU13N60M2 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STU13N60M2 Datasheet PDF : 18 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STP13N60M2, STU13N60M2, STW13N60M2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 600 V
drain current (VGS = 0) VDS = 600 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source
on-resistance
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
600
V
1 μA
100 μA
±10 μA
2
3
4V
0.35 0.38 Ω
Symbol
Parameter
Table 6. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 580 - pF
-
32
- pF
-
1.1
- pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 480 V, VGS = 0
- 120 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
-
6.6
-
Ω
Qg Total gate charge
VDD = 480 V, ID = 11 A,
Qgs
Gate-source charge
VGS = 10 V (see Figure 17)
Qgd Gate-drain charge
-
17
- nC
-
2.5
- nC
-
9
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
11
- ns
VDD = 300 V, ID = 5.5 A,
-
10
- ns
RG = 4.7 Ω, VGS = 10 V (see
Figure 16 and 21)
-
41
- ns
- 9.5 - ns
4/18
DocID023937 Rev 5
 

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