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M48Z12-150PC6_99 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
M48Z12-150PC6_99
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M48Z12-150PC6_99 Datasheet PDF : 12 Pages
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Figure 3. Block Diagram
M48Z02, M48Z12
LITHIUM
CELL
VOLTAGE SENSE
AND
SWITCHING
CIRCUITRY
POWER
VPFD
2K x 8
SRAM ARRAY
A0-A10
DQ0-DQ7
E
W
G
VCC
VSS
AI01255
READ MODE
The M48Z02/12 is in the Read Mode whenever W
(Write Enable) is high and E (Chip Enable) is low.
The device architecture allows ripple-through ac-
cess of data from eight of 16,384 locations in the
static storage array. Thus, the unique address
specified by the 11 Address Inputs defines which
one of the 2,048 bytes of data is to be accessed.
Valid data will be available at the Data I/O pins
within Address Access time (tAVQV) after the last
address input signal is stable, providing that the E
and G access times are also satisfied. If the E and
G access times are not met, valid data will be
available after the latter of the Chip Enable Access
time (tELQV) or Output Enable Access time (tGLQV).
The state of the eight three-state Data I/O signals
is controlled by E and G. If the outputs are activated
before tAVQV, the data lines will be driven to an
indeterminate state until tAVQV. If the Address In-
puts are changed while E and G remain active,
output data will remain valid for Output Data Hold
time (tAXQX) but will go indeterminate until the next
Address Access.
Table 4. AC Measurement Conditions
Input Rise and Fall Times
Input Pulse Voltages
≤ 5ns
0V to 3V
Input and Output Timing Ref. Voltages 1.5V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Figure 4. AC Testing Load Circuit
5V
DEVICE
UNDER
TEST
1kΩ
1.8kΩ
OUT
CL = 100pF
CL includes JIG capacitance
AI01019
3/12
 

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