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STP13N80K5 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
Manufacturer
STP13N80K5 Datasheet PDF : 23 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
Electrical characteristics
STB13N80K5, STF13N80K5, STP13N80K5,
STW13N80K5
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Symbol
Parameter
Table 5: On/off-state
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage drain
current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-
resistance
VGS = 0 V, VDS = 800 V
VGS = 0 V, VDS = 800 V,
TC = 125 ° C(1)
VDS = 0 V, VGS = ±20 V
VDD = VGS, ID = 100 µA
VGS = 10 V, ID = 6 A
Min. Typ. Max. Unit
800
V
1 µA
50 µA
±10 µA
3
4
5
V
0.37 0.45 Ω
Notes:
(1)Defined by design, not subject to production test.
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss Input capacitance
Coss Output capacitance
Crss
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Co(tr)(1)
Co(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
VGS = 0 V, VDS = 0 to 640 V
Rg Intrinsic gate resistance
f = 1 MHz, ID= 0 A
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 640 V, ID = 2.5 A
VGS= 0 to 10 V
(see Figure 22: "Test circuit
for gate charge behavior")
Min. Typ. Max. Unit
- 870 - pF
-
50
-
pF
-
2
- pF
- 110 - pF
-
43
-
pF
-
5
-
Ω
-
29
-
nC
-
7
- nC
-
18
-
nC
Notes:
(1)Co(tr) is a constant capacitance value that gives the same charging time as Coss while VDS is rising from 0 to
80% VDSS.
(2)Co(er) is a constant capacitance value that gives the same stored energy as Coss while VDS is rising from 0 to
80% VDSS.
4/23
DocID024348 Rev 4
 

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