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OBTS917 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
OBTS917
Siemens
Siemens AG Siemens
OBTS917 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Electrical Characteristics
Parameter
at Tj=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
VIN = 10 V, VDS = 12 V
Current limit 1)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, without RCC
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, RCC = 0
Dynamic Characteristics
Turn-on time VIN to 90% ID:
RL = 4,7 , VIN = 0 to 10 V, Vbb = 12 V
Turn-off time VIN to 10% ID:
RL = 4,7 , VIN = 10 to 0 V, Vbb = 12 V
Slew rate on
70 to 50% Vbb:
RL = 4,7 , VIN = 0 to 10 V, Vbb = 12 V
Slew rate off
50 to 70% Vbb:
RL = 4,7 , VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
Thermal overload trip temperature
Unclamped single pulse inductive energy
ID = 3.5 A, Tj = 25 °C, Vbb = 32 V
ID = 3.5 A, Tj = 150 °C, Vbb = 32 V
Inverse Diode
Inverse diode forward voltage
IF = 5*3.5A, tm = 300 µs, VIN = 0 V
BTS 917
Symbol
Values
Unit
min. typ. max.
ID(SCp)
-
80
-A
ID(lim)
1.5 2.5 6
35 45 55
ton
-
toff
-
-dVDS/dton -
dVDS/dtoff
-
40 70 µs
70 150
1
3 V/µs
1
3
Tjt
150 165 - °C
EAS
mJ
1000 -
-
225 -
-
VSD
-
1
-V
1Device switched on into existing short circuit (see diagram Determination of I D(lim). Dependant on the application, these values
might be exceeded for max. 50 µs in case of short circuit occurs while the device is on condition
Semiconductor Group
Page 4
14.07.1998
 

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