DatasheetQ Logo
Electronic component search and free download site.
Transistors,MosFET ,Diode,Integrated circuits

OBTS917 View Datasheet(PDF) - Siemens AG

Part Name
Description
Manufacturer
OBTS917
Siemens
Siemens AG Siemens
OBTS917 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
BTS 917
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Drain source voltage
Drain source voltage for short circuit protection
RCC = 0
without RCC
VDS
VDS(SC)
Continuous input current 1)
IIN
-0.2V VIN 10V
VIN < -0.2V or VIN > 10V
Operating temperature
Tj
Storage temperature
Tstg
Power dissipation
Ptot
TC = 25 °C
Unclamped single pulse inductive energy
EAS
ID(ISO) = 3.5 A
Electrostatic discharge voltage (Human Body Model) VESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection VLoadDump2) = VA + VS
VLD
VIN=low or high; VA=13.5 V
td = 400 ms, RI = 2 , ID=0,5*3.5A
td = 400 ms, RI = 2 , ID= 3.5A
DIN humidity category, DIN 40 040
IEC climatic category; DIN IEC 68-1
Value
60
15
50
no limit
| IIN | 2
- 40 ... +150
- 55 ... +150
50
1000
3000
75
70
E
40/150/56
Unit
V
mA
°C
W
mJ
V
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB: 3)
RthJC
RthJA
RthJA
2.5
K/W
75
45
1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2VLoaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.
Semiconductor Group
Page 2
14.07.1998
 

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]