FQP27P06_01 View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
FQP27P06_01 Datasheet PDF : 8 Pages
| |||
Elerical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = -250 µA
-60 --
--
ID = -250 µA, Referenced to 25°C -- -0.06 --
IDSS
Zero Gate Voltage Drain Current
VDS = -60 V, VGS = 0 V
VDS = -48 V, TC = 150°C
--
--
-1
--
--
-10
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = 25 V, VDS = 0 V
--
-- -100
--
--
100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = -250 µA
-2.0 --
-4.0
V
VGS = -10 V, ID = -13.5 A
-- 0.055 0.07
Ω
VDS = -30 V, ID = -13.5 A (Note 4)
--
12.4
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -25 V, VGS = 0 V,
f = 1.0 MHz
-- 1100 1400 pF
-- 510 660
pF
-- 120 155
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -30 V, ID = -13.5 A,
RG = 25 Ω
--
18
45
ns
-- 185 380
ns
--
30
70
ns
(Note 4, 5)
--
90 190
ns
VDS = -48 V, ID = -27 A,
--
33
43
nC
VGS = -10 V
-- 6.8
--
nC
(Note 4, 5)
--
18
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
-27
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
-- -108
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = -27 A
--
--
-4.0
V
trr
Reverse Recovery Time
VGS = 0 V, IS = -27 A,
-- 105
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
0.41
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ -27A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A2. May 2001
|
|
Share Link: 