STD9N60M2 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
Manufacturer
STD9N60M2
STMicroelectronics
STD9N60M2 Datasheet PDF : 21 Pages
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STD9N60M2, STP9N60M2, STU9N60M2
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VGS
ID
ID
(1)
IDM
PTOT
(2)
dv/dt
(3)
dv/dt
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Tstg Storage temperature
Tj
Max. operating junction temperature
1. Pulse width limited by safe operating area..
2. ISD ≤ 5.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD=400 V
3. VDS ≤ 480 V
± 25
5.5
3.6
22
60
15
50
- 55 to 150
150
Unit
V
A
A
A
W
V/ns
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220 IPAK
Rthj-case Thermal resistance junction-case max
(1)
Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-ambient max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
2.08
°C/W
50
°C/W
100 °C/W
Symbol
Table 4. Avalanche characteristics
Parameter
Value
Unit
Avalanche current, repetetive or not repetetive
IAR
(pulse width limited by Tjmax )
Single pulse avalanche energy (starting Tj=25°C,
EAS
ID= IAR; VDD=50)
2
A
105
mJ
DocID024399 Rev 2
3/21
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