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BC109C View Datasheet(PDF) - New Jersey Semiconductor

Part Name
Description
Manufacturer
BC109C Datasheet PDF : 2 Pages
1 2
BC107
BC108
BC109
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
'ceo(i)
Parameter
Collector-Base Leakage Current
Test Conditions
VCB=45V BC107
VCB = 25V BC108, BC109
Min.
lceo(i)
Collector-Emitter Leakage Current
VCB=45V BC107
@Tamb=125°C
VCB=25V BC108, BC109
IEBO
Emitter Cut-off Current
VEB=4V lc =0
VCE = 5V lc = 2mA
Group A BC107, BC108 110
h2iE
Group B All Types
180
Static Forward Current Transfer Ratio
Group C BC108, BC109 380
BC107
110
BC108
110
BC109
180
VBE
Base - Emitter Breakdown
VCE = 5V lc = 2mA
VBE(Sat)(i) Base - Emitter Saturation Voltage
IB= 0.5mA lc=10mA
\/CE(sat)(i) Collector - Emitter Saturation Voltage IB= 0.5mA lc=10mA
fT
Transition Frequency
VCE = 5V 10= 10mA
150
f=100MHz
VCE = 5V IC= 0.2mA
F
Noise Factor
R = 2kiJ f=1kHz AF=200HZ
BC109
BC107, BC108
VCE - 5V lc = 2mAf -100kHz
Group A BC107, BC108 125
n2ie
Small Signal Forward Current Transfer Group B All Types
240
Ratio
Group C BC108, BC109 450
BC107
125
BC108
125
BC109
240
VCE = 5Vlc = 2mAf=1kHz
Group A BC107, BC108 1.6
i11e
Common Emitter Input Impedance
Group B All Types
3.2
Group C BC108, BC109 6.0
V C E = 5 V l c = 2 m A f = 1kHz
Group A BC107, BC108
n22e
Common Emitter Output Admittance Group B All Types
Group C BC108, BC109
C22b
Common Base Output Capacitance VCB=10V f=1MHz
^th(j-amb) Thermal Resistance: Junction to •
Ambient
Typ.
Max.
15
15
4
4
1
Unit
nA
MA
MA
220
460
800
460
800
800
0.7
0.83
0.25
!
V
V
V
MHz
4
dB
I
I 10
I
260
500
; 900
500
900
900
4.5
: 8.5
kQ
15
30 ;
60
MS
110
6
PF
500 °C/W
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