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BC108C View Datasheet(PDF) - Unspecified

Part Name
Description
Manufacturer
BC108C Datasheet PDF : 4 Pages
1 2 3 4
BC107/BC108 Series
Low Power Bipolar Transistors
Absolute Maximum Ratings
Description
Symbol
BC107
BC108
Unit
Collector-Emitter Voltage
VCEO
45
25
Collector-Base Voltage
VCBO
50
30
Emitter-Base Voltage
VEBO
6.0
5.0
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
IC
0.2
0.6
2.28
PD
1.0
6.67
Operating and Storage Junction Temperature Range
TJ, Tstg
-65 to +200
Thermal Resistance
Junction to Case
Rth (j-c)
175
Electrical Characteristics (Ta = 25°C unless otherwise specified)
V
A
W
mW/°C
°C
°C/W
Description
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
DC Current
Base Emitter Saturation Voltage
Collector Emitter Saturation Voltage
Base Emitter On Voltage
Symbol
VCEO
VEBO
ICBO
hFE
VBE (Sat)
VCE (Sat)
VBE (on)
Test Condition
IC = 2mA, IB = 0
BC107
BC108
IE = 10µA, IC = 0
BC107
BC108
VCB = 45V, IE = 0
BC107
VCB = 25V, IE = 0
BC108
Tamb = 125°C
VCB = 45V, IE = 0
BC107
VCB = 25V, IE = 0
BC108
IC = 10µA, VCE = 5V
B Group
C Group
IC = 2mA, VCE = 5V
BC 107
BC 108
A Group
B Group
C Group
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5mA
IC = 2mA, VCE = 5V
IC = 10mA, VCE = 5V
Minimum Maximum
Unit
45
25
-
V
6.0
5.0
-
15
15
nA
-
4.0
µA
4.0
40
-
100
-
110
450
110
800
-
110
220
200
450
420
800
-
0.83
1.05
-
0.25
0.60
V
0.55
0.70
-
0.77
Page 2
20/04/06 V1.0
 

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