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BC109C View Datasheet(PDF) - Central Semiconductor

Part Name
Description
Manufacturer
BC109C
Central-Semiconductor
Central Semiconductor Central-Semiconductor
BC109C Datasheet PDF : 0 Pages
BC107,A,B
BC108B,C
BC109B,C
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BC107, BC108,
BC109 series types are small signal NPN silicon
transistors, manufactured by the epitaxial planar
process, designed for general purpose amplifier
applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
JC
BC107
50
45
6.0
BC108 BC109
30
30
25
25
5.0
5.0
200
600
-65 to +200
175
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=45V (BC107)
ICBO
VCB=45V, TA=125°C (BC107)
ICBO
VCB=25V (BC108, BC109)
ICBO
VCB=25V, TA=125°C (BC108, BC109)
BVCEO
IC=2.0mA (BC107)
45
BVCEO
IC=2.0mA (BC108, BC109)
25
BVEBO
IE=10μA (BC107)
6.0
BVEBO
IE=10μA (BC108, BC109)
5.0
VCE(SAT) IC=10mA, IB=0.5mA
VCE(SAT) IC=100mA, IB=5.0mA
VBE(SAT) IC=10mA, IB=0.5mA
VBE(SAT) IC=100mA, IB=5.0mA
VBE(ON)
VCE=5.0V, IC=2.0mA
0.55
VBE(ON)
VCE=5.0V, IC=10mA
hFE
VCE=5.0V, IC=10μA (BC107B, BC108B, BC109B) 40
hFE
VCE=5.0V, IC=10μA (BC108C, BC109C)
100
hFE
VCE=5.0V, IC=2.0mA (BC107)
110
hFE
VCE=5.0V, IC=2.0mA (BC107A)
110
hFE
VCE=5.0V, IC=2.0mA (BC107B, BC108B, BC109B) 200
hFE
VCE=5.0V, IC=2.0mA (BC108C, BC109C)
420
TYP
MAX
15
4.0
15
4.0
0.25
0.6
0.7
0.83
1.0
1.05
0.7
0.77
450
220
450
800
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
μA
nA
μA
V
V
V
V
V
V
V
V
V
V
R1 (16-August 2012)
 

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