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630N Просмотр технического описания (PDF) - Fairchild Semiconductor

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630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Fairchild
Fairchild Semiconductor Fairchild
630N Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
Typical Characteristic (Continued)
1.3
ID = 250µA
1.2
3000
1000
VGS = 0V, f = 1MHz
CISS = CGS + CGD
1.1
1.0
0.9
-80
-40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
COSS CDS + CGD
100
CRSS = CGD
10
0.1
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100 200
Figure 12. Capacitance vs Drain to Source
Voltage
10
VDD = 100V
8
6
4
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
ID = 9.3A
ID = 5A
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VGS
tP
0V
VDS
L
DUT
+
VDD
-
IAS
0.01
Figure 14. Unclamped Energy Test Circuit
tP
IAS
BVDSS
VDS
VDD
0
tAV
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B
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