630N View Datasheet(PDF) - Fairchild Semiconductor
Part Name
Description
Manufacturer
630N Datasheet PDF : 11 Pages
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January 2002
IRF630N/IRF630NS/IRF630NL
N-Channel Power MOSFETs
200V, 9.3A, 0.30Ω
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.200Ω (Typ), VGS = 10V
• Simulation Models
- Temperature Compensated PSPICE® and SABER©
Electrical Models
- Spice and SABER© Thermal Impedance Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
TO-263
TO-262
SOURCE
DRAIN
GATE
D
DRAIN
(FLANGE)
TO-220
G
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TC = 25oC, VGS = 10V)
Continuous (TC = 100oC, VGS = 10V)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
Operating and Storage Temperature
Ratings
200
±20
9.3
6.5
Figure 4
94
82
0.55
-55 to 175
Units
V
V
A
A
A
mJ
W
W/oC
oC
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
1.83
62
40
oC/W
oC/W
oC/W
Package Marking and Ordering Information
Device Marking
630N
630N
630N
Device
IRF630NS
IRF630NL
IRF630N
Package
TO-263AB
TO-262AA
TO-220AB
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50
50
©2002 Fairchild Semiconductor Corporation
Rev. B
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