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630N Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталогеКомпоненты Описаниепроизводитель
630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Fairchild
Fairchild Semiconductor Fairchild
630N Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
SPICE Thermal Model
REV May 2001
IRF630N
CTHERM1 th 6 8.0e-4
CTHERM2 6 5 2.6e-3
CTHERM3 5 4 3.5e-3
CTHERM4 4 3 5.2e-3
CTHERM5 3 2 7.0e-3
CTHERM6 2 tl 3.3e-2
RTHERM1 th 6 1.0e-3
RTHERM2 6 5 4.5e-3
RTHERM3 5 4 4.2e-2
RTHERM4 4 3 2.5e-1
RTHERM5 3 2 3.9e-1
RTHERM6 2 tl 5.0e-1
SABER Thermal Model
SABER thermal model IRF630N
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 8.0e-4
ctherm.ctherm2 6 5 = 2.6e-3
ctherm.ctherm3 5 4 = 3.5e-3
ctherm.ctherm4 4 3 = 5.2e-3
ctherm.ctherm5 3 2 = 7.0e-3
ctherm.ctherm6 2 tl = 3.3e-2
rtherm.rtherm1 th 6 = 1.0e-3
rtherm.rtherm2 6 5 = 4.5e-3
rtherm.rtherm3 5 4 = 4.2e-2
rtherm.rtherm4 4 3 = 2.5e-1
rtherm.rtherm5 3 2 = 3.9e-1
rtherm.rtherm6 2 tl = 5.0e-1
}
th
JUNCTION
RTHERM1
6
RTHERM2
5
RTHERM3
4
RTHERM4
3
RTHERM5
2
RTHERM6
CTHERM1
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
tl
CASE
©2002 Fairchild Semiconductor Corporation
Rev. B
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