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STD3NK90ZT4 View Datasheet(PDF) -

Part Name
Description
Manufacturer
STD3NK90ZT4
 
STD3NK90ZT4 Datasheet PDF : 0 Pages
STD3NK90Z, STP3NK90Z, STP3NK90ZFP
Electrical characteristics
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 3 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 3 A, di/dt = 100A/µs,
VDD=40 V, Tj=150°C
(Figure 22)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
3A
-
12 A
-
1.6 V
510
ns
- 2.2
µC
8.7
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown
voltage
IGS=± 1 mA, ID=0
Min. Typ. Max. Unit
30 -
-V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Doc ID 9193 Rev 2
5/20
 

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