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BCP52(2008) View Datasheet(PDF) - NXP Semiconductors.

Part Name
Description
Manufacturer
BCP52
(Rev.:2008)
NXP
NXP Semiconductors. NXP
BCP52 Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NXP Semiconductors
BCP52; BCX52
60 V, 1 A PNP medium power transistors
300
hFE
200
100
006aaa226
(1)
(2)
(3)
1.6
IC
(A)
1.2
0.8
0.4
006aaa230
IB (mA) = 45 40.5 36
31.5
27
22.5
18
13.5
9
4.5
0
101
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 8. DC current gain as a function of collector
current; typical values
0
0
0.4
0.8
1.2
1.6
2.0
VCE (V)
Tamb = 25 °C
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
1200
VBE
(mV)
1000
800
600
400
006aaa227
(1)
(2)
(3)
200
101
1
10
102
103
104
IC (mA)
VCE = 2 V
(1) Tamb = 55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 10. Base-emitter voltage as a function of collector
current; typical values
103
VCEsat
(mV)
102
006aaa228
(2) (1)
(3)
10
101
1
10
102
103
104
IC (mA)
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = 55 °C
Fig 11. Collector-emitter saturation voltage as a
function of collector current; typical values
BCP52_BCX52_8
Product data sheet
Rev. 08 — 25 February 2008
© NXP B.V. 2008. All rights reserved.
8 of 12
 

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