D1895 View Datasheet(PDF) - Panasonic Corporation
Part Name
Description
Manufacturer
D1895 Datasheet PDF : 3 Pages
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Power Transistors
2SD1895
Silicon NPN triple diffusion planar type Darlington
For power amplification
Complementary to 2SB1255
s Features
q Optimum for 90W HiFi output
q High foward current transfer ratio hFE: 5000 to 30000
q Low collector to emitter saturation voltage VCE(sat): <2.5V
q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
160
V
Collector to emitter voltage VCEO
140
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
15
A
Collector current
IC
8
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
100
W
3
Junction temperature
Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
15.0±0.3
11.0±0.2
φ3.2±0.1
Unit: mm
5.0±0.2
3.2
2.0±0.2
2.0±0.1
1.1±0.1
0.6±0.2
5.45±0.3
10.9±0.5
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
VCB = 160V, IE = 0
VCE = 140V, IB = 0
VEB = 5V, IC = 0
IC = 30mA, IB = 0
VCE = 5V, IC = 1A
VCE = 5V, IC = 7A
IC = 7A, IB = 7mA
IC = 7A, IB = 7mA
VCE = 10V, IC = 0.5A, f = 1MHz
IC = 7A, IB1 = 7mA, IB2 = –7mA,
VCC = 50V
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
min
140
2000
5000
typ max Unit
100
µA
100
µA
100
µA
V
30000
2.5
V
3.0
V
20
MHz
2.0
µs
6.0
µs
1.2
µs
1
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