BUZ32 View Datasheet(PDF) - Siemens AG

Part Name

Description

Manufacturer

BUZ32

SIPMOS® Power Transistor

Siemens AG 

BUZ 32

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 9.5 A, VDD = 50 V

RGS = 25 Ω, L = 2 mH

130

mJ

110

EAS 100

90

80

70

60

50

40

30

20

10

0

20 40 60 80 100 120 °C 160

Tj

Drain-source breakdown voltage

V(BR)DSS = ƒ(Tj)

Typ. gate charge

VGS = ƒ(QGate)

parameter: ID puls = 14 A

16

V

VGS

12

10

0,2 VDS max

0,8 VDS max

8

6

4

2

0

0 4 8 12 16 20 24 28 32 nC 38

QGate

240

V

230

V(BR)DSS

225

220

215

210

205

200

195

190

185

180

-60

-20

20

60

100 °C 160

Tj

Semiconductor Group

8

07/96

Share Link: