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Part Name
Description
BUZ32 View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
BUZ32
SIPMOS® Power Transistor
Infineon Technologies
BUZ32 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
BUZ 32
Power dissipation
P
tot
=
Æ’
(
T
C
)
80
W
P
tot
60
50
40
30
20
10
0
0 20 40 60 80 100 120 ËšC 160
T
C
Safe operating area
I
D
=
Æ’
(
V
DS
)
parameter:
D
= 0.01
, T
C
= 25ËšC
10
2
A
I
D
10
1
t
p
= 7.6µs
10 µs
100 µs
Drain current
I
D
=
Æ’
(
T
C
)
parameter:
V
GS
≥
10 V
10
A
I
D
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 ËšC 160
T
C
Transient thermal impedance
Z
th JC
=
Æ’
(
t
p
)
parameter:
D = t
p
/
T
10
1
K/W
Z
thJC
10
0
10
0
10
-1
10
0
10
1
Data Sheet
1 ms
10 ms
DC
10
2
V
V
DS
10
-1
10
-2
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-3
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
0
t
p
5
05.99
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