NXP Semiconductors
PNP general purpose transistor
Product data sheet
2PB1219A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Refer to SOT323; SC70 standard mounting conditions.
CONDITIONS
note 1
VALUE
625
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
Cc
fT
collector cut-off current
emitter cut-off current
DC current gain
2PB1219AQ
2PB1219AR
2PB1219AS
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
2PB1219AQ
2PB1219AR
2PB1219AS
IE = 0; VCB = −20 V
IE = 0; VCB = −20 V; Tj = 150 °C
IC = 0; VEB = −4 V
IC = −150 mA; VCE = −10 V; note 1
IC = −500 mA; VCE = −10 V; note 1
IC = −300 mA; IB = −30 mA; note 1
IC = −300 mA; IB = −30 mA; note 1
IE = ie = 0; VCB = −10 V; f = 1 MHz
IC = 50 mA; VCE = −10 V;
f = 100 MHz; note 1
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MIN.
−
−
−
MAX.
−100
−5
−100
UNIT
nA
μA
nA
85
170
120 240
170 340
40
−
−
−600 mV
−
−1.5 V
−
15
pF
100 −
120 −
140 −
MHz
MHz
MHz
1999 Apr 12
3