PZTA28 View Datasheet(PDF) - Fairchild Semiconductor

Part Name

Description

Manufacturer

PZTA28

NPN Darlington Transistor

Fairchild Semiconductor 

NPN Darlington Transistor

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CES

Collector-Emitter Breakdown Voltage

V(BR)CBO

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector Cutoff Current

ICES

Collector Cutoff Current

IEBO

Emitter Cutoff Current

IC = 100 µA, VBE = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 60 V, IE = 0

VCE = 60 V, VBE = 0

VEB = 10 V, IC = 0

80

V

80

V

12

V

100

nA

500

nA

100

nA

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

IC = 10 mA, VCE = 5.0 V

IC = 100 mA, VCE = 5.0 V

IC = 10 mA, IB = 0.01 mA

IC = 100 mA, IB = 0.1 mA

IC = 100 mA, VCE = 5.0 V

10,000

10,000

1.2

V

1.5

2.0

V

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Current Gain - Bandwidth Product

IC = 10 mA, VCE = 5.0,

125

f = 100 MHz

MHz

Output Capacitance

VCB = 1.0 V, IE = 0, f = 1.0 MHz

8.0

pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

3

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

100

V CE= 5V

80

125 °C

60

25 °C

40

20

- 40 °C

0

0 .00 1

0 .0 1

0.1 0.2

I C - COLLECTOR CURRENT (A)

Collector-Emitter Saturation

Voltage vs Collector Current

1.6

β = 1000

1.2

0.8

- 40 °C

0.4

25 °C

125 °C

0

1

10

100

1000

I C - COLLECTOR CURRE NT (mA)

MPSA28/MMBTA28/PZTA28, Rev A

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