SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
ᴌWith Built-in Bias Resistors.
ᴌSimplify Circuit Design.
ᴌReduce a Quantity of Parts and Manufacturing Process.
ᴌHigh Packing Density.
EQUIVALENT CIRCUIT
OUT
R1
IN
R2
COMMON
BIAS RESISTOR VALUES
TYPE NO. R1(kή) R2(kή)
KRC827E
10
47
KRC828E
22
47
KRC829E
47
22
KRC827E~KRC829E
EPITAXIAL PLANAR NPN TRANSISTOR
B
B1
1
6
DIM MILLIMETERS
A
1.6+_ 0.05
2
5
A1
1.0 +_ 0.05
B
1.6+_ 0.05
B1
1.2 +_ 0.05
3
4
C
0.50
D
0.2+_ 0.05
H
0.5+_ 0.05
P
J
0.12+_ 0.05
P
P
5
1. Q1 COMMON (EMITTER)
2. Q2 COMMON (EMITTER)
3. Q2 IN (BASE)
4. Q2 OUT (COLLECTOR)
5. Q1 IN (BASE)
6. Q1 OUT (COLLECTOR)
TES6
EQUIVALENT CIRCUIT (TOP VIEW)
6
5
4
Q1
Q2
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Output Voltage
KRC827Eᴕ829E
KRC827E
Input Voltage
KRC828E
KRC829E
Output Current
Power Dissipation
Junction Temperature
KRC827Eᴕ829E
Storage Temperature Range
* Total Rating.
MARK SPEC
TYPE
MARK
KRC827E
YH
KRC828E
YI
KRC829E
YJ
1
2
3
SYMBOL
VO
VI
IO
PD *
Tj
Tstg
RATING
50
30, -6
40, -7
40,-15
100
200
150
-55ᴕ150
Marking
Type Name
654
1 23
2002. 1. 24
Revision No : 1
UNIT
V
V
mA
mW
ᴱ
ᴱ
1/4