P-TO220-3-31(2003) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
P-TO220-3-31 Datasheet PDF : 13 Pages
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Final data
SPP17N80C3, SPB17N80C3
SPA17N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO 220
• Ultra low gate charge
VDS
RDS(on)
ID
P-TO220-3-31 P-TO263-3-2
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
1 23
P-TO220-3-31
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP17N80C3
SPB17N80C3
SPA17N80C3
Package
Ordering Code
P-TO220-3-1 Q67040-S4353
P-TO263-3-2 Q67040-S4354
P-TO220-3-31 Q67040-S4441
Marking
17N80C3
17N80C3
17N80C3
800 V
0.29 Ω
17 A
P-TO220-3-1
Maximum Ratings
Parameter
Symbol
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current, tp limited by Tjmax
Avalanche energy, single pulse
ID=3.4A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=17A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, TC = 25°C
Operating and storage temperature
ID
ID puls
EAS
EAR
IAR
VGS
VGS
Ptot
Tj , Tstg
Value
SPP_B SPA
17
171)
11
111)
51
51
670
670
0.5
0.5
17
17
±20
±20
±30
±30
208
42
-55...+150
Unit
A
A
mJ
A
V
W
°C
Page 1
2003-07-03
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