TSAL6400
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
14330
0.6 0.4 0.2 0
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
14340
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114
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81011
Rev. 1.7, 04-Sep-08