TA1100M View Datasheet(PDF) - LiteOn Technology
Part Name
Description
Manufacturer
TA1100M Datasheet PDF : 4 Pages
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LITE-ON
SEMICONDUCTOR
TA0640M thru TA3500M
SURFACE MOUNT
THYRISTOR SURGE PROTECTIVE DEVICE
Bi-Directional
VDRM - 58 to 320 Volts
IPP
- 50 Amperes
FEATURES
Oxide Glass Passivated Junction
Bidirectional protection in a single device
Surge capabilities up to 50A @10/1000us or 250A
@8/20us
High off state Impedance and low on state voltage
Plastic material has UL flammability classification
94V-0
MECHANICAL DATA
Case : Molded plastic
Polarity : Denotes none cathode band
Weight : 0.093 grams
SMA
SMA
A
DIM. MIN. MAX.
A
4.06 4.57
B
2.29 2.92
B
C
C
1.27 1.63
D
0.15 0.31
E
4.83 5.59
G
H
F
D
E
F
0.05 0.20
G
2.01 2.62
H
0.76 1.52
All Dimensions in millimeter
MAXIMUM RATINGS
CHARACTERISTICS
Non-repetitive peak impulse current @ 10/1000us
Non-repetitive peak On-state current @ 8.3ms (one half cycle)
Junction temperature range
storage temperature range
THERMAL RESISTANCE
SYMBOL
IPP
ITSM
TJ
TSTG
CHARACTERISTICS
Junction to leads
Junction to ambient on print circuit (on recommended pad layout)
Typical positive temperature coefficient for brekdown voltage
SYMBOL
Rth(J-L)
Rth(J-A)
△VBR/△TJ
MAXIMUM RATED SURGE WAVEFORM
WAVEFORM
2/10 us
8/20 us
10/160 us
10/700 us
10/560 us
10/1000 us
STANDARD
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
ITU-T K20/21
FCC Part 68
GR-1089-CORE
IPP (A)
300
250
150
100
75
50
100
50
0
tr
VALUE
50
25
-40 to +150
-55 to +150
VALUE
20
100
0.1
UNIT
A
A
℃
℃
UNIT
℃ /W
℃ /W
%/℃
Peak value (Ipp)
tr= rise time to peak value
tp= Decay time to half value
Half value
tp
TIME
REV. 0, 03-Dec-2001, KSWA03
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