IRF1404 View Datasheet(PDF) - Inchange Semiconductor
Part Name
Description
Manufacturer
IRF1404 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
IRF1404
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBO
L
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.25mA
RDS(on) Drain-Source On-Resistance
IGSS Gate-Body Leakage Current
VGS= 10V; ID= 95A
VGS= ±20V;VDS= 0
IDSS
Zero Gate Voltage Drain Current VDS= 40V; VGS= 0
VSD Forward On-Voltage
IS= 95A; VGS=0
Gfs Forward Transconductance
VDS= 25V；ID= 60A
MIN
TYPE MAX UNIT
40
V
2
4
V
0.004 Ω
±200 nA
20
μA
1.3
V
106
S
·
isc website： www.iscsemi.com
2 isc & iscsemi is registered trademark
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