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MMBD1501A View Datasheet(PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Part Name
Description
Manufacturer
MMBD1501A
Jiangsu
Jiangsu Changjiang Electronics Technology Co., Ltd Jiangsu
MMBD1501A Datasheet PDF : 4 Pages
1 2 3 4
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1501A LOW LEAKAGE DIODE
FEATURES
Low Leakage
High Conductance
MARKING: A11
SOT-23
A11 A11
Solid dot = Green molding compound device,if none,the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VR
DC Blocking Voltage
IO
Continuous Forward Current
IFM
Peak Forward Current
IFSM
Non-repetitive Peak Forward Surge Current @t=8.3ms
PD
Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
200
200
700
2.0
350
357
150
-55~+150
Unit
V
mA
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test conditions
IR=5μA
VR=180V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0V,f=1MHz
Min Typ Max Unit
200
V
10
nA
0.75
0.85
0.95
V
1.1
1.3
1.5
4
pF
www.cj-elec.com
1
B,Nov,2014
 

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