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Part Name
Description
BUZ171 View Datasheet(PDF) - Siemens AG
Part Name
Description
Manufacturer
BUZ171
SIPMOS® Power Transistor
Siemens AG
BUZ171 Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
BUZ 171
Avalanche energy
E
AS
=
Æ’
(
T
j
)
parameter:
I
D
= -8 A,
V
DD
= -25 V
R
GS
= 25
Ω
,
L
= 1.1 mH
75
mJ
Drain-source breakdown voltage
V
(BR)DSS
=
Æ’
(
T
j
)
-60
V
E
AS
60
55
V
(BR)DSS
-57
-56
50
-55
45
-54
40
-53
35
-52
30
-51
25
-50
20
-49
15
-48
10
-47
5
0
20 40 60 80 100 120 °C 160
T
j
-46
-45
-60
-20
20
60
100 °C 160
T
j
Semiconductor Group
8
07/96
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