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Part Name
Description
P-TO-263-3-2(2005) View Datasheet(PDF) - Infineon Technologies
Part Name
Description
Manufacturer
P-TO-263-3-2
(Rev.:2005)
High Speed IGBT in NPT-technology
Infineon Technologies
P-TO-263-3-2 Datasheet PDF : 11 Pages
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SGB15N60HS
^
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=25
°
C,
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
=23
Ω
L
σ
1)
=60nH,
C
σ
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
13
14
209
15
0.32
0.21
0.53
Unit
max.
ns
mJ
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
T
j
=150
°
C
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 3.6
Ω
L
σ
1)
=60nH,
C
σ
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
T
j
=150
°
C
V
CC
=400V,
I
C
=15A,
V
GE
=0/15V,
R
G
= 23
Ω
L
σ
1)
=60nH,
C
σ
1)
=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
11
6
72
26
0.38
0.20
0.58
12
15
235
17
0.48
0.30
0.78
Unit
max.
ns
mJ
ns
mJ
1)
Leakage inductance
L
σ
an d Stray capacity
C
σ
due to test circuit in Figure E.
Power Semiconductors
3
Rev 2.1 Jan 05
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